APTMC120AM08CD3AG APTMC120AM08CD3AG C rev 4 january, 2015 www.microsemi.com 1-7 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings (per sic mosfet) these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source voltage 1200 v i d continuous drain current t c = 25c 250 a t c = 80c 190 i dm pulsed drain current 550 v gs gate - source voltage -10/25v v r dson drain - source on resistance 10 m p d maximum power dissipation t c = 25c 1100 w application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? sic power mosfet - low r ds(on) - high temperature performance ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin source for easy drive ? high level of integration ? aln substrate for improved thermal performance ? m6 power connectors benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? rohs compliant phase leg sic mosfet power module v dss = 1200v r dson = 8m typ @ tj = 25c i d = 250a @ tc = 25c downloaded from: http:///
APTMC120AM08CD3AG APTMC120AM08CD3AG C rev 4 january, 2015 www.microsemi.com 2-7 electrical characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v , v ds = 1200v 120 1000 a r ds(on) drain C source on resistance v gs = 20v i d = 200a t j = 25c 8 10 m t j = 150c 15 21 v gs ( th ) gate threshold voltage v gs = v ds , i d = 10ma 1.7 2.2 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 2.5 a dynamic characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 1000v f = 1mhz 9500 pf c oss output capacitance 800 c rss reverse transfer capacitance 65 q g total gate charge v gs = 20v v bus = 800v i d = 200a 490 nc q gs gate C source charge 110 q g d gate C drain charge 180 t d(on) turn-on delay time v gs = -2/+20v v bus = 800v i d = 200a ; t j =150c r l = 4 ? ; r g = 5 20 ns t r rise time 20 t d(off) turn-off delay time 75 t f fall time 35 e on turn on energy inductive switching v gs = -5/+20v v bus = 600v i d = 200a r g = 5 t j = 150c 4.3 mj e off turn off energy t j = 150c 2.4 r gint internal gate resistance 1 r thjc junction to case thermal resistance 0.11 c/w body diode diode ratings and characteristics (per sic mosfet) symbol characteristic test conditions min typ max unit v sd diode forward voltage v gs = -5v, i sd = 100a 3.3 v v gs = -2v, i sd = 100a 3.1 t rr reverse recovery time i sd = 200a ; v gs = -5v v r = 800v ; di f /dt = 3500a/s 40 ns q rr reverse recovery charge 1650 nc i rr reverse recovery current 64 a downloaded from: http:///
APTMC120AM08CD3AG APTMC120AM08CD3AG C rev 4 january, 2015 www.microsemi.com 3-7 sic schottky diode rati ngs and characteristics (per sic diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 1200 v i rrm reverse leakage current v r =1200v t j = 25c 0.38 2.4 ma t j = 175c 0.68 12 i f forward current tc = 125c 120 a v f diode forward voltage i f = 120a t j = 25c 1.6 1.8 v t j = 175c 2.3 3 q c total capacitive charge i f = 120a, v r = 1200v di/dt =5000a/s 960 nc c total capacitance f = 1mhz, v r = 200v 1152 pf f = 1mhz, v r = 400v 828 r thjc junction to case thermal resistance 0.10 c/w thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range sic mosfet -40 150 c sic diode -40 175 t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque for terminals m6 3 5 n.m to heatsink m6 3 5 wt package weight 350 g d3 package outline (dimensions in mm) downloaded from: http:///
APTMC120AM08CD3AG APTMC120AM08CD3AG C rev 4 january, 2015 www.microsemi.com 4-7 typical sic mosfet performance curve v gs =16v v gs =18v v gs =20v 0 50 100 150 200 250 300 350 400 012345 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =25c v gs =20v v gs =16v v gs =18v 0 50 100 150 200 250 300 350 400 0123456789 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =150c 0.75 1 1.25 1.5 1.75 2 25 50 75 100 125 150 t j , junction temperature (c) norm alized r ds(on) vs. tem perature r dson , drain source on resistance v gs =20v i d =200a t j =25c t j =150c 0 50 100 150 200 250 300 350 400 24681 01 2 i ds , drain source current (a) v gs , gate source voltage (v) transfert characteristics d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maxim um effective transient thermal im pedance, junction to case vs puls e duration eon eof f 0 2 4 6 8 10 50 100 150 200 250 300 350 400 sw itching energy (m j) drain current (a) inductive switching energy vs current v gs =-5/20v r g = 5 ? v bus = 600v t j = 150c eon eof f 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5 7.5 10 12.5 15 sw itching energy (m j) gate resistance (ohms) inductive switching energy vs rg v gs =-5/20v i d = 200a v bus = 600v t j = 150c downloaded from: http:///
APTMC120AM08CD3AG APTMC120AM08CD3AG C rev 4 january, 2015 www.microsemi.com 5-7 cis s crss coss 0.01 0.1 1 10 100 0 200 400 600 800 1000 c, capacitance (nf) v ds , drain source voltage (v) capacitance vs drain source voltage 0 4 8 12 16 20 0 100 200 300 400 500 v gs , gate source voltage (v) gate charge (nc) gate charge vs gate source voltage t j = 25c i d = 200a v ds = 800v zcs hard switching zvs 0 100 200 300 400 500 600 50 100 150 200 250 fr e que ncy (khz ) i d , drain current (a) operating frequency vs drain current v bus =600v d=50% r g =5 ? t j =150c t c =75c v gs =0v v gs =5v v gs =15v v gs =20v -400 -350 -300 -250 -200 -150 -100 -50 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =25c v gs =-2v v gs =0v v gs =-5v -400 -350 -300 -250 -200 -150 -100 -50 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 i ds , drain source current (a) v ds , drain source voltage (v) body diode characteristics t j =25c v gs =-2v v gs =0v v gs =-5v -400 -350 -300 -250 -200 -150 -100 -50 0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 i ds , drain source current (a) v ds , drain source voltage (v) body diode characteristics t j =150c v gs =0v v gs =5v v gs =15v v gs =20v -400 -350 -300 -250 -200 -150 -100 -50 0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =150c downloaded from: http:///
APTMC120AM08CD3AG APTMC120AM08CD3AG C rev 4 january, 2015 www.microsemi.com 6-7 typical sic diode performance curve d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse dur ation t j =25c t j =125c t j =175c 0 40 80 120 160 200 240 00.511.522.533.544.5 i f forward current (a) v f forward voltage (v) forward characteristics t j =25c t j =125c t j =175c 0 400 800 1200 1600 2000 400 600 800 1000 1200 1400 i r reverse current (a) v r reverse voltage (v) reverse characteristics 0 2 4 6 8 10 1 10 100 1000 c, capacitance (nf) v r reverse voltage capacitance vs.reverse voltage downloaded from: http:///
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